MJE13003D discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. characteristic symbol rating unit collector-emitter voltage vcev 700 v vceo 400 v emitter-base voltage vebo 9 v collector current ic 1.5 a base current ib 0.75 a total power dissipation(t c=25oc) pd 40 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-emitter breakdown voltage bvcev 700 - - v ic=1ma, v be(off)=1.5v bvceo 400 - - v ic=10ma collector cutoff current icev - - 1 ma vce =700v, v be(off)=1.5v emitter cutoff current iebo - - 1 ma veb =9v vce(sat)1 - - 0.5 v ic=0.5a, ib=0.1a collector-emitter saturation voltage (1) vce(sat)2 - - 1 v ic=1a, ib=0.25a vce(sat)3 - - 3 v ic=1.5a, ib=0.5a base-emitter saturation voltage (1) vbe(sat)1 - - 1 v ic=0.5a, ib=0.1a vbe(sat)2 - - 1.2 v ic=1a, ib=0.25a dc current gain(1) hfe1 8 - 40 - ic=0.5a, vce=2v hfe2 5 - 25 - ic=1a, vce=2v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% to-126ml dimensions in inches and (millimeters) .090 (2.28) .123(3.12) .113(2.87) .084(2.14).074(1.88) .033(0.84).027(0.68) .163(4.12).153(3.87) .044(1.12).034(0.87) .060(1.52).050(1.27) .084(2.12).074(1.87) .591(15.0).551(14.0) .300(7.62).290(7.37) .148(3.75).138(3.50) .056(1.42).046(1.17) .180 (4.56) typ .146(3.70).136(3.44) .027(0.69).017(0.43) typ 1 2 3
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